Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence.

Name: Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence.
Author: Xing, Yao

Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence. — المؤلف: Xing, Yao — Nanoscale research letters Mar 2019

المؤلف: Xing, Yao
النشر: Nanoscale research letters Mar 2019
الوصف: 88 p.