Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer.

Name: Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer.
Author: Hu, Hongpo

Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer. — المؤلف: Hu, Hongpo — Scientific reports Mar 2019

المؤلف: Hu, Hongpo
النشر: Scientific reports Mar 2019
الوصف: 3447 p.