Atomic Layer-Deposited HfAlOx-Based RRAM with Low Operating Voltage for Computing In-Memory Applications.

Name: Atomic Layer-Deposited HfAlOx-Based RRAM with Low Operating Voltage for Computing In-Memory Applications.
Author: He, Zhen-Yu

Atomic Layer-Deposited HfAlOx-Based RRAM with Low Operating Voltage for Computing In-Memory Applications. — المؤلف: He, Zhen-Yu — Nanoscale research letters Feb 2019

المؤلف: He, Zhen-Yu
النشر: Nanoscale research letters Feb 2019
الوصف: 51 p.