Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.

Name: Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.
Author: Lu, Hongliang

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture. — المؤلف: Lu, Hongliang — Nanomaterials (Basel, Switzerland) Feb 2019

المؤلف: Lu, Hongliang
النشر: Nanomaterials (Basel, Switzerland) Feb 2019