High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor.

Name: High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor.
Author: Duan, Xiaoling

High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor. — المؤلف: Duan, Xiaoling — Micromachines Jan 2019