Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H₃PO₄-Based Etchant.

Name: Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H₃PO₄-Based Etchant.
Author: Hsu, Wen-Yang

Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H₃PO₄-Based Etchant. — المؤلف: Hsu, Wen-Yang — Micromachines Nov 2018

المؤلف: Hsu, Wen-Yang
النشر: Micromachines Nov 2018