85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering.

Name: 85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering.
Author: Wang, Tzu-Yu

85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering. — المؤلف: Wang, Tzu-Yu — Scientific reports 10 2017