High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide.

High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide. — المؤلف: Noviyana, Imas — Materials (Basel, Switzerland) Jun 2017

المؤلف
Noviyana, Imas
النشر
Materials (Basel, Switzerland) Jun 2017