High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide.
High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide. — المؤلف: Noviyana, Imas — Materials (Basel, Switzerland) Jun 2017
- المؤلف
- Noviyana, Imas
- النشر
- Materials (Basel, Switzerland) Jun 2017